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G5S12020PM 1200V/20A Global Power Silicon Carbide Schottky Diode

1200V/20A/TO-247-2 Silicon Carbide Power Schottky Barrier Diode
  • G5S12020PM

  • GPT

Features :

• Zero reverse recovery current

• Zero forward recovery voltage

• Temperature independent switching behavior

• High temperature operation

• High frequency operation

Applications :

• SMPS, e.g., CCM PFC;

• Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV

Benefits :

• Unipolar rectifier

• Substantially reduced switching losses

• No thermal run-away with parallel devices

• Reduced heat sink requirements

Applications, Features, and Advantages of Silicon Carbide Diodes&Characteristics and Advantages of Silicon Carbide Diodes


Silicon Carbide (SiC) diodes have gained significant attention in recent years due to their unique characteristics and advantages over traditional silicon diodes. This article explores the various applications, features, and advantages of SiC diodes.


  1. Power Electronics: SiC diodes are widely used in power electronics applications due to their ability to handle high voltage and current levels. They are commonly found in power supplies, inverters, motor drives, and electric vehicles. The high switching speed and low switching losses of SiC diodes make them ideal for high-frequency applications.

  2. Renewable Energy: The renewable energy sector heavily relies on SiC diodes for efficient power conversion. Solar power inverters and wind turbine systems utilize SiC diodes to maximize energy conversion and minimize power losses. The high-temperature tolerance and low conduction losses of SiC diodes make them suitable for harsh environmental conditions.

  3. Automotive Industry: SiC diodes are increasingly used in electric and hybrid vehicles for their superior performance and efficiency. They enable faster charging, longer battery life, and improved overall vehicle performance. SiC diodes also reduce the size and weight of power electronic systems in electric vehicles, leading to cost savings and increased range.


  1. High Temperature Capability: One of the key advantages of SiC diodes is their ability to operate at high temperatures. They can withstand temperatures up to 300°C, which is significantly higher than traditional silicon diodes. This feature makes SiC diodes suitable for applications where high ambient temperatures are present, such as automotive and industrial environments.

  2. Low Switching Losses: SiC diodes have extremely low switching losses compared to silicon diodes. This characteristic allows for faster switching speeds, resulting in improved system efficiency. The reduced energy losses during switching make SiC diodes ideal for high-frequency applications, where fast and efficient switching is crucial.

  3. High Voltage Capability: SiC diodes can handle higher voltage levels compared to silicon diodes. This feature enables the design of compact and efficient power electronic systems, reducing the need for additional components. The ability to handle high voltage levels also makes SiC diodes suitable for applications requiring high power density, such as electric vehicle charging stations.


  1. Improved Efficiency: The low conduction and switching losses of SiC diodes result in improved system efficiency. This efficiency improvement translates to reduced energy consumption, lower operating costs, and extended device lifespan. SiC diodes contribute to energy savings and environmental sustainability.

  2. Size and Weight Reduction: SiC diodes offer higher power density, allowing for the design of smaller and lighter power electronic systems. This advantage is particularly beneficial in automotive and aerospace applications where space and weight constraints are critical. The compact size and reduced weight of SiC diodes contribute to overall system cost savings and improved performance.


Silicon Carbide (SiC) diodes offer a range of applications, features, and advantages that make them highly desirable in various industries. Their high temperature capability, low switching losses, and high voltage capability set them apart from traditional silicon diodes. SiC diodes contribute to improved system efficiency, reduced energy consumption, and smaller power electronic systems. As technology continues to advance, SiC diodes are expected to play a significant role in shaping the future of power electronics.

SIC Carbide Diode

High Temperature

High Frequency

Unipolar rectifier


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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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