English 
WMQ098N06LG2
Wayon
Product Name:
60V N-Channel Enhancement Mode Power MOSFET WMQ098N06LG2 PDFN3030-8L
Product Description:
Description：
WMQ098N06LG2 uses Wayon's 2nd generation power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This device
is well suited for high efficiency fast switching applications.
Features:
VDS= 60V, ID = 42A
RDS(on) < 9.8mΩ VGS = 10V
RDS(on) < 15mΩ VGS = 4.5V
Green Device Available
Low Gate Charge
100% EAS Guaranteed
Applications:
Synchronous Rectification
DC/DC Converter
Introducing the 60V N-Channel Enhancement Mode Power MOSFET WMQ098N06LG2 PDFN3030-8L. This professional-grade product is designed to effortlessly switch or amplify electronic signals with utmost precision and reliability.
With a voltage rating of 60V, this power MOSFET offers exceptional performance and efficiency in various electronic applications. Its N-Channel enhancement mode ensures seamless signal control, allowing for seamless switching and amplification of electronic signals.
The WMQ098N06LG2 PDFN3030-8L MOSFET is meticulously crafted to meet the highest industry standards, guaranteeing its durability and long-lasting performance. Its advanced design and cutting-edge technology make it an ideal choice for professionals and enthusiasts alike.
Whether you're working on audio amplifiers, power supplies, or motor control circuits, this power MOSFET is a versatile solution that will elevate your electronic projects to new heights. Its reliable performance and robust construction make it suitable for a wide range of applications, ensuring optimal functionality and efficiency.
Invest in the 60V N-Channel Enhancement Mode Power MOSFET WMQ098N06LG2 PDFN3030-8L and experience the power of seamless signal control. Elevate your electronic projects with this professional-grade product that guarantees exceptional performance and reliability.
Product Specifications:
Product Name:
60V N-Channel Enhancement Mode Power MOSFET WMQ098N06LG2 PDFN3030-8L
Product Description:
Description：
WMQ098N06LG2 uses Wayon's 2nd generation power trench MOSFET
technology that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance. This device
is well suited for high efficiency fast switching applications.
Features:
VDS= 60V, ID = 42A
RDS(on) < 9.8mΩ VGS = 10V
RDS(on) < 15mΩ VGS = 4.5V
Green Device Available
Low Gate Charge
100% EAS Guaranteed
Applications:
Synchronous Rectification
DC/DC Converter
Introducing the 60V N-Channel Enhancement Mode Power MOSFET WMQ098N06LG2 PDFN3030-8L. This professional-grade product is designed to effortlessly switch or amplify electronic signals with utmost precision and reliability.
With a voltage rating of 60V, this power MOSFET offers exceptional performance and efficiency in various electronic applications. Its N-Channel enhancement mode ensures seamless signal control, allowing for seamless switching and amplification of electronic signals.
The WMQ098N06LG2 PDFN3030-8L MOSFET is meticulously crafted to meet the highest industry standards, guaranteeing its durability and long-lasting performance. Its advanced design and cutting-edge technology make it an ideal choice for professionals and enthusiasts alike.
Whether you're working on audio amplifiers, power supplies, or motor control circuits, this power MOSFET is a versatile solution that will elevate your electronic projects to new heights. Its reliable performance and robust construction make it suitable for a wide range of applications, ensuring optimal functionality and efficiency.
Invest in the 60V N-Channel Enhancement Mode Power MOSFET WMQ098N06LG2 PDFN3030-8L and experience the power of seamless signal control. Elevate your electronic projects with this professional-grade product that guarantees exceptional performance and reliability.
Product Specifications:
