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650V/10A IGBT Trench-FS Gen1, L4, GD10FSX65L4SN

650V/10A IGBT Trench-FS Gen1
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  • GD10FSX65L4SN

  • Merry

650V/10A IGBT Trench-FS Gen1, L4, GD10FSX65L4SN
Package: L4
Rated Current: 10A
Chip Type: Trench-FS Gen1
Rated Voltage: 650V
Circuit Structure: Sixpack
Hallmark: 


Features :
- Low VCE(sat) Trench IGBT technology
- Low switching loss
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175oC
- Fast & soft reverse recovery anti-parallel FWD
- Isolated heatsink using DBC technology

Typical Applications :
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply

GD10FSX65L4SNName1

1000_F_48893186

Name2


K7B-A5

Name1

1000_F_460390235_DKAoH3ELvcr7UgoNEvY6RhQod3WGy88k

Name2

GD560HTX75P7HN

Name1

MG25P12E1

Name2


products-1

Name1

GD660HFA75N5HY_B29

Name2

GD10FSX65L4SN-1_页面_1

GD10FSX65L4SN-1_页面_2

GD10FSX65L4SN-1_页面_3

COMPANY PROFILE-01

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En_Merry catalogue_16-9_页面_09

En_Merry catalogue_16-9_页面_10

En_Merry catalogue_16-9_页面_11

FAQ-01


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650V/10A Trench-FS Gen1 IGBT GD10FSX65L4SN IGBT L4 IGBT Sixpack Fast Recovery Diode Rectifier

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Floor 3,Block,5 Number.2 Waltai Road,Wanjiang District,Dongguan City,Guangdong Province,China 
Phone: +86-13549368780
Tel: +86-0769-21665206
Email: jennie@merryelc.com
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